| PART |
Description |
Maker |
| AT28HC256E-12LM_883 AT28HC256F-12DM_883 AT28HC256F |
256 (32K x 8) High-speed Parallel EEPROM
|
ATMEL Corporation
|
| W24257AJ-8N W24L257AJ-8A |
32K X 8 High Speed CMOS Static RAM 32K X 8 STANDARD SRAM, 8 ns, PDSO28
32K×8 High-Speed CMOS Static RAM(32K×8位高速CMOS静态RAM)
|
Winbond Electronics, Corp.
Winbond Electronics Corp
|
| WS57C256F WS57C256F-35 WS57C256F-35C WS57C256F-35D |
-WS57C256F MILITARY HIGH SPEED 32K X 8 CMOS EPROM
32K X 8 OTPROM, 55 ns, PDIP28
HIGH SPEED 32K x 8 CMOS EPROM 高2K的8的CMOS存储
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M68AF031A |
256 Kbit (32K x 8) 5.0V Asynchronous SRAM(256 K(32K x 8)5.0V,异步SRAM)
|
意法半导
|
| M95256 M95256BN M95256-BN1T M95256-BN3T M95256-BN5 |
256 Kbit (32K x8)serial SPI bus EEPROM with high speed clock, operating = 2.5 V to 5.5 V
256 Kbit (32K x8)serial SPI bus EEPROM with high speed clock, operating = 4.5 V to 5.5 V
128 Kbit (16K x8)serial SPI bus EEPROM with high speed clock, operating = 2.7 V to 3.6 V
128 Kbit (16K x8)serial SPI bus EEPROM with high speed clock, operating = 4.5 V to 5.5 V
256/128 Kbit Serial SPI Bus EEPROM With High Speed Clock
128 Kbit (16K x8)serial SPI bus EEPROM with high speed clock, operating = 1.8 V to 3.6 V
128 Kbit (16K x8)serial SPI bus EEPROM with high speed clock, operating = 2.5 V to 5.5 V
256 Kbit (32K x8)serial SPI bus EEPROM with high speed clock, operating = 1.8 V to 3.6 V
256 Kbit (32K x8)serial SPI bus EEPROM with high speed clock, operating = 2.7 V to 3.6 V
|
STMicroelectronics
ST Microelectronics
SGS Thomson Microelectronics
|
| 6SVP470M IS61C3216-10K IS61C3216-10T IS61C3216-12K |
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K X 16 STANDARD SRAM, 20 ns, PDSO44
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K X 16 STANDARD SRAM, 10 ns, PDSO44
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K X 16 STANDARD SRAM, 12 ns, PDSO44
Frequency characteristics
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Sanyo Semicon Device
Integrated Silicon Solution Inc
|
| IDT70V658S15DR IDT70V657S10DRI IDT70V657S15DRI IDT |
Dual N-Channel Digital FET
HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 高.3 128/64/32K × 36 ASYNCHRONO美国双端口静态RAM
HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 32K X 36 DUAL-PORT SRAM, 10 ns, PQFP208
HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 32K X 36 DUAL-PORT SRAM, 15 ns, PQFP208
|
Integrated Device Technology, Inc.
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| AS7C513B AS7C513B-20TI AS7C513B-10JC AS7C513B-10JI |
High Speed CMOS Logic 3-to-8 Line Decoder Demultiplexer Inverting and Non-Inverting 16-PDIP -55 to 125 32K X 16 STANDARD SRAM, 10 ns, PDSO44
High Speed CMOS Logic 3-to-8 Line Decoder Demultiplexer Inverting and Non-Inverting 16-SOIC -55 to 125 32K X 16 STANDARD SRAM, 10 ns, PDSO44
5V 32K x 16 CMOS SRAM 32K X 16 STANDARD SRAM, 20 ns, PDSO44
High Speed CMOS Logic 3-to-8 Line Decoder Demultiplexer Inverting and Non-Inverting 16-SOIC -55 to 125 32K X 16 STANDARD SRAM, 12 ns, PDSO44
High Speed CMOS Logic Dual 2-to-4 Line Decoders/Demultiplexers 16-PDIP -55 to 125
SRAM - 5V Fast Asynchronous
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| M27C256B M27C256B-10B1TR M27C256B-10B1X M27C256B-1 |
32K X 8 OTPROM, 150 ns, PQCC32
32K X 8 UVPROM, 60 ns, CDIP28
32K X 8 UVPROM, 150 ns, CDIP28
256 Kbit (32Kb x 8) UV EPROM and OTP EPROM
From old datasheet system
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IDT70T3319S133BF IDT70T3319S133BC IDT70T3319S133DD |
JFET-Input Operational Amplifier 8-SOIC 0 to 70
HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 18 DUAL-PORT SRAM, 12 ns, PQFP144
HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 18 DUAL-PORT SRAM, 15 ns, PQFP144
HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高.5V12/256/128K X 18 SYNCHRONOU S双，端口静态与3.3V.5V的内存界
JFET-Input Operational Amplifier 8-TSSOP 0 to 70 512K X 18 DUAL-PORT SRAM, 15 ns, PQFP144
HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 12 ns, PQFP144
HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 15 ns, PQFP144
JFET-Input Operational Amplifier 8-SO 0 to 70 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA208
HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 10 ns, PBGA208
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| CXK5T8257BTM/BYM/BM-12LLX CXK5T8257BTM/BYM/BM-10LL |
32K X 8 STANDARD SRAM, 100 ns, PDSO28
32K X 8 STANDARD SRAM, 120 ns, PDSO28
32768-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
